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 BC636/638/640
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
4.550.2
PNP Type
Plastic Encapsulate Transistors
FEATURE
Power Dissipation: PCM: 0.83 mW (Tamb=25oC)
3.50.2
4.50.2
14.30.2
0.46+0.1 -0.1 (1.27 Typ. ) 1.25-0.2 123 2.540.1
o
+0.2
0.43+0.08 -0.07
1: Emitter 2: Collector 3: Base
MAXIMUM RATINGS (TA=25 C unless otherwise specified)
PARAMETERS Collector - Emitter Voltage BC636 BC638 BC640 Collector - Base Voltage BC636 BC638 BC640 Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Thermal Resistance from Junction to Ambient
o
SYMBOLS VCEO
VALUES -45 -60 -80
UNIT V V V V V V V A A mA
o
VCBO
-45 -60 -100
VEBO IC ICP IB TJ,TSTG RJA*
-5 -1 -1.5 100 150, -65 ~ 150 150
C
K/w
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified)
PARAMETERS Collector - emitter breakdown voltage Collector cut-off current Emitter cut-off current SYMBOL V(BR)CEO I CBO I EBO hFE(1) DC current gain hFE(2) hFE(3) Collector - emitter saturation voltage Base - emitter voltage Transition frequency VCE(sat) VBE(ON) fT VCB=-30V, IE=0 VEB=-5V, IB=0 VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA BC636-10
BC636-16, BC638-16, BC640-16
TEST CONDITIONS IC=10mA, IB=0 BC636 BC638 BC640
MIN -45 -60 -80
TYP
MAX
UNIT V V V A A
-0.1 -0.1 40 63 100 25 160 250 -0.5 -1 100
VCE=-2V, IC=-500mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA VCE=-5V, IC=-50mA, f=100MHz
V V MHz
CLASSIFICATION OF hFE(2)
RANK RANGE
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
BC636-10 63-160
BC636-16, BC638-16, BC640-16 100-250
Any changing of specification will not be informed individual
Page 1 of 2
BC636/638/640
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
TYPICAL CHARACTERISTICS
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individu
Page 2of 2


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